Recombination Mechanisms in Semiconductors
作者： Govind P. Agrawal , Niloy K. Dutta
DOI: 10.1007/978-1-4613-0481-4_3
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摘要: This chapter describes the electron-hole recombination mechanisms in a direct-band-gap semiconductor. Recombination can general be classified into two groups, radiative and nonradiative. Radiative occurs when an electron conduction band recombines with hole valence excess energy is emitted form of photon. thus transition to empty state (hole) band. The optical processes associated transitions are (i) spontaneous emission, (ii) absorption or gain, (iii) stimulated emission. Stimulated which photon has exactly same momentum as incident photon, forms basis for laser action. concept emission dates back work Einstein1 1917.
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