Ionized magnetron sputter deposition of amorphous carbon nitride thin films

摘要: Carbon nitride thin films were prepared using an ionized magnetron sputtering system. An inductively coupled rf plasma was generated in the region between source (high purity graphite) and substrate table. argon–nitrogen mixture used as gas. Sputtered atoms which pass through radio frequency (rf) may be ionized, degree of ionization depends on several processing variables, such gas total pressure, reactive partial applied power. Pulsed bias voltage varied up to −500 V. Chemical bonding composition deposited studied by infrared Auger electron spectroscopy, respectively. ultramicroindentation system measure hardness. Nitrogen found bonded carbon various configurations. The dependence nitrogen‐to‐carbon ratio film hardness deposition conditions studied. Under optimum conditions, with ∼0.3–0.4 and...