Radiation damage mechanisms in CsI(Tl) studied by ion beam induced luminescence
作者： Alberto Quaranta , Fabiana Gramegna , Vladimir Kravchuk , Carlo Scian
DOI: 10.1016/J.NIMB.2008.03.195
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摘要: Abstract Ion beam induced luminescence (IBIL) has been used to study the kinetics of defect production under ion irradiation in CsI(Tl) crystals with different Tl + concentrations (250, 560, 3250 and 6500 ppm). The have irradiated H 4 He at 1.8 MeV. Both scintillator spectra after intensity decrease wavelengths as a function fluence measured. emission bands shift higher irradiation, light interpolated following saturation model for point concentration. Crystals low present UV peak pure CsI 300 nm whose during reaches maximum irradiation. At damage rate depends on stopping power, while it activator results can be interpreted by assuming that defects affecting are nearby ions.
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