Methods for producing silicon on insulator structures having high resistivity regions in the handle wafer
作者： Jeffrey L. Libbert , Robert W. Standley , Lu Fei
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摘要: Silicon on insulator structures having a high resistivity region in the handle wafer of silicon structure are disclosed. Methods for producing such also provided. Exemplary methods involve creating non-uniform thermal donor profile and/or modifying dopant to create new wafer. may one or more SOI manufacturing steps electronic device (e.g., RF device) steps.
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