Electron Tunneling Through p‐Type GaAs–Pb Point Contacts

作者: D. C. Tsui

DOI: 10.1063/1.1659277

关键词:

摘要: We have studied the variation with bias (to ± 150 mV) of I, dV/dI, and d2I/dV2 p‐type GaAs point contacts on Pb single crystals at liquid‐He temperatures. The results are examined compared those obtained from GaAs–Pb film tunnel junctions fabricated by conventional techniques. A small reduction energy gap a shift in phonon‐induced structure superconducting tunneling characteristics been observed, we suggest these due to pressure contact. effects this also observed some qualitative explanations suggested.

参考文章(11)
G. D. Mahan, J. W. Conley, THE DENSITY OF STATES IN METAL‐SEMICONDUCTOR TUNNELING Applied Physics Letters. ,vol. 11, pp. 29- 31 ,(1967) , 10.1063/1.1754947
J. W. Conley, C. B. Duke, G. D. Mahan, J. J. Tiemann, Electron Tunneling in Metal-Semiconductor Barriers Physical Review. ,vol. 150, pp. 466- 469 ,(1966) , 10.1103/PHYSREV.150.466
Alan J. Bennett, Theory of the Anisotropic Energy Gap in Superconducting Lead Physical Review. ,vol. 140, pp. A1902- A1920 ,(1965) , 10.1103/PHYSREV.140.A1902
John Bardeen, Surface States and Rectification at a Metal Semi-Conductor Contact Physical Review. ,vol. 71, pp. 717- 727 ,(1947) , 10.1103/PHYSREV.71.717
William A. Thompson, Molecular Spectroscopy Using Schottky-Barrier Tunneling Physical Review Letters. ,vol. 20, pp. 1085- 1086 ,(1968) , 10.1103/PHYSREVLETT.20.1085
P.W. Anderson, Theory of dirty superconductors Journal of Physics and Chemistry of Solids. ,vol. 11, pp. 26- 30 ,(1959) , 10.1016/0022-3697(59)90036-8
H. Bjerrum Møller, J. C. Gylden Houmann, A. R. Mackintosh, Magnetic Interactions in Rare-Earth Metals from Inelastic Neutron Scattering Physical Review Letters. ,vol. 19, pp. 312- 314 ,(1967) , 10.1103/PHYSREVLETT.19.312