摘要: We have studied the variation with bias (to ± 150 mV) of I, dV/dI, and d2I/dV2 p‐type GaAs point contacts on Pb single crystals at liquid‐He temperatures. The results are examined compared those obtained from GaAs–Pb film tunnel junctions fabricated by conventional techniques. A small reduction energy gap a shift in phonon‐induced structure superconducting tunneling characteristics been observed, we suggest these due to pressure contact. effects this also observed some qualitative explanations suggested.