Controlled growth of gallium nitride single-crystal nanowires using a chemical vapor deposition method

作者: Song Han , Wu Jin , Tao Tang , Chao Li , Daihua Zhang

DOI: 10.1557/JMR.2003.0033

关键词:

摘要: Chemical vapor deposition (CVD) using gold nanoparticles as the catalyst to grow high-quality single-crystal gallium nitride nanowires was developed. This method enables control over several important aspects of growth, including nanowire diameter by monodispersed clusters, location via e-beam patterning sites, and orientation epitaxial growth ona-plane sapphire substrates. Our work opens up new ways use GaN nanobuilding blocks.

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