Influence of a high‐temperature hydrogen anneal on the memory characteristics of p‐channel MNOS transistors

摘要: The effects of a postnitridation high‐temperature hydrogen anneal on p‐channel metal‐nitride‐oxide‐semiconductor (MNOS) memory transistors have been studied. It is shown that, although the density surface states at Si‐SiO2 interface decreases with increasing temperatures, temperatures exceeding nitride deposition temperature should not be used, since they result in degradation. Short anneals 800 °C 30% reduction threshold voltage decay rates by elimination backtunneling stored charges towards states. At same time technique guarantees more reliable operation array and strongly increases channel mobilities. In hydrogen‐annealed MNOS degradation process retarded resulting better endurance figures.