作者: Miran Mozetič , Marianne Balat-Pichelin
DOI: 10.1016/J.VACUUM.2013.07.023
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摘要: Abstract Samples of silicon carbide were exposed to carbon dioxide plasma at high temperature study thermal and chemical degradation, as well the evolution surface morphology. Scanning electron microscope images revealed that samples remained fairly intact up a approximately 1700 K, when modification degradation started occur. The oxidation caused formation liquid silica droplets several μm in diameter exceeding 1800 K. Sharp nano-needles found stretched perpendicularly from this temperature. Increases resulted increased density with until entire was covered 1850 K. Further increases rapid material loss nano-needles. These results are explainable by particularities passive SiC upon treatment particles.