作者: E. V. Khramov , V. V. Privezentsev
DOI: 10.1134/S1063782618160121
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摘要: The single crystal CZ n-Si(100) substrates with electron concentration no = 5 × 1016 cm−3 were implanted by 64Zn+ ions dose of cm−2 and energy 50 keV. During implantation the ion beam current density was less than 0.5 μA/cm2 to avoid substrate magnetically heating. After implantation, plates subjected isochronous for one hour heat treatment in oxygen atmosphere at temperatures from 400 up 1000oC a step 100oC. Zn K-edge EXAFS spectra measured fluorescent mode. Si(111) channel-cut monochromator used scanning; resolution ΔE/E 2 10–4. According data, all Si 900oC is fully oxidized: an absolute maximum Fourier transform R ~ 1.6 A corresponds Zn–O distance. Based on XANES we suggest interaction between atoms support.