Self-assembled gold silicide wires on bromine-passivated Si(110) surfaces

作者: B Rout , B Sundaravel , Amal K Das , SK Ghose , K Sekar

DOI: 10.1116/1.1305292

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摘要: Thin Au films (∼45 nm) deposited by thermal evaporation under high vacuum on bromine-passivated Si(110) substrates, upon annealing showed the formation of long gold silicide wire-like islands top a thin uniform layer in self-assembled Stranski–Krastanov growth process. Optical micrographs long, straight and narrow with aspect ratios as large 200:1. Scanning electron microscopy images revealed presence facets. The are aligned along [110] direction surface. Rutherford backscattering spectrometry measurements an ion microbeam identified to possess varying thickness across single island one would expect for having facets also over Si substrate be very (∼1.5 nm). observed alignment surface has been explained terms lattice mismatch between gold–silicide silicon invoking theory shape t...

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