Stable cw operation at room temperature of a 1.5‐μm wavelength multiple quantum well laser on a Si substrate
作者： M. Sugo , H. Mori , Y. Sakai , Y. Itoh
DOI: 10.1063/1.106638
关键词:
摘要: Room‐temperature cw operation of an InGaAs/InGaAsP multiple quantum well (MQW) laser diode on a Si substrate is reported. The MQW emits at 1.54 μm wavelength and exhibits no degradation after over 2000 h operation. Employing hybrid organometallic vapor phase epitaxy/vapor mixing epitaxy method layer structure for improving crystalline quality, high‐quality layers are obtained. A stable longitudinal mode spectrum demonstrates the effectiveness active layer.
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