High Thermoelectric Performance in p‐type Polycrystalline Cd‐doped SnSe Achieved by a Combination of Cation Vacancies and Localized Lattice Engineering
作者： Xiaolei Shi , Angyin Wu , Tianli Feng , Kun Zheng , Weidi Liu
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摘要: Herein, a high figure of merit (ZT) of≈ 1.7 at 823 K is reported in p‐type polycrystalline Cd‐doped SnSe by combining cation vacancies and localized‐lattice engineering. It is observed that the introduction of Cd atoms in SnSe lattice induce Sn vacancies, which act as p‐type dopants. A combination of facile solvothermal synthesis and fast spark plasma sintering technique boosts the Sn vacancy to a high level of≈ 2.9%, which results in an optimum hole concentration of≈ 2.6× 1019 cm− 3 and an improved power factor of≈ 6.9 µW cm− 1 K− 2 …
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