作者: Dieter Eisele , Jurgen Pape , Armin Hochhut
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摘要: A method for the production of a disk-shaped silicon semiconductor component with at least two adjoining zones opposite type conductivity and different doping strengths using lapping disk which includes steps positioning semi-conductor adjacent disk, subjecting to suction pressure on its side so as be bowed up from an initial plane radius curvature corresponding desired angle, rotating beveling off bounding surface pn-junction separating zones.