Electronic Structure of W-Doped VO2 Thin Films with Giant Metal–Insulator Transition Investigated by Hard X-ray Core-Level Photoemission Spectroscopy
作者： Hidefumi Takami , Teruo Kanki , Shigenori Ueda , Keisuke Kobayashi , Hidekazu Tanaka
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摘要: We use bulk-sensitive hard X-ray core-level photoemission spectroscopy to investigate the electronic structure of 1 at. % W-doped VO2 (VWO) thin films exhibiting a high temperature coefficient resistance, above -10%/K at room temperature. According W 4d spectra, chemical state doped takes only 6+ valence state, which suggests introduction V3+. The satellite V 2p3/2 main peak, corresponds metallic-coherent screened states, was enhanced for VWO compared with indicating that electron doping plays an important role in control metal–insulator transition.
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