作者: Feng Li , James Robert Jennings , Qing Wang , Julianto Chua , Nripan Mathews
DOI: 10.1021/JP4030188
关键词:
摘要: To apply impedance spectroscopy (IS) for studying charge transport in the mesoporous film of solid-state dye-sensitized solar cells (ss-DSCs), it is necessary to determine relative conductivities electron and hole transporting phases, given equivalent positions distributed resistances (rt rh) circuit. Here, in-plane transistor-like devices employing TiO2 spiro-OMeTAD conductor were fabricated characterized with IS. By design, rt rh are no longer these devices, thus providing a means their values independently. Fitting simulation results combined cross checks against obtained ss-DSCs regular cell geometry clearly show that significantly larger than under all conditions studied. With confidently assigned, transfer discussed effective carrier diff...