Porous Silicon's fractal nature revisited
作者： Priyanka Yogi , Shailendra K. Saxena , Anjali Chaudhary , Devesh K. Pathak , Suryakant Mishra
DOI: 10.1016/J.SPMI.2018.05.026
关键词:
摘要: Abstract Fractal nature of porous silicon (Si), where nanowires (NWs) Si has been observed inside the membrane matrix, revisited this time by metal assisted chemical etching (MACE) also known as induced or MIE. While carrying out MACE wafer with silver nanoparticles (AgNPs) metal, it is that non vertical take place. An SEM study reveals usual well aligned SiNWs, approximately 50 nm thick, consists nanometer wide pores in themselves. The sized turn results NSs a few nanometers these thick looking SiNWs and are capable showing quantum confinement effects. TEM studies have consolidated to model growth mechanism for fractal Si.
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