Enhanced hydrolytic and electrical stability of eco-friendly processed polyimide gate dielectrics for organic transistors
作者： Yuri Jeong , Hyunjin Park , Yujin So , Hyun Jung Mun , Tae Joo Shin
DOI: 10.1039/D0TC03341C
关键词:
摘要: Here, eco-friendly, low-temperature solution-processed polyimide (PI) thin films with high hydrolytic stability under ambient air have been successfully developed for gate dielectric layers in organic field-effect transistors (OFETs). Poly(amic acid) (PAA), a precursor of PI based on 3,3′,4,4′-biphenyltetracarboxylic dianhydride (BPDA) and p-phenylenediamine (pPDA) 1,2-dimethylimidazole, is synthesized through one-step polymerization reaction deionized water as solvent. The incorporation 1,2-dimethylimidazole allows the formation ammonium salt PAA (PAAS), which exhibits significant enhancement solubility water. chemical structure material properties PAAS polymerized (W-PAAS) are investigated to determine effect solvent compared those (O-PAA). O-PAA W-PAAS explored by identifying surface morphology O-PI W-PI prepared inert, ambient, humid air. provide more reliable superior electrical performances films. In particular, owing excellent W-PAAS, OFETs dielectrics yield 100% at low temperature below 250 °C, regardless processing environment.
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