Investigation of MOS capacitors with thin ZrO 2 layers and various gate materials for advanced DRAM applications

摘要: Thin ZrO 2 layers were used to realize MOS capacitors with aluminum, polysilicon, and molybdenum gate electrodes. The layers, 300-600 A in thickness, obtained by metal organic chemical vapor deposition. effects of various high-temperature treatments as well material deposition conditions on the capacitor properties studied. Processing compatible standard silicon technology established obtain suitable for advanced DRAM application. Relative dielectric constant ∈ ≥ 16, breakdown field E_{B} \ge 3 MV/cm, leakage currents at applied voltage 5V around 10-8A/cm2enable realization layer equivalent 35 SiO .