Near-field probing of dielectric screening by hexagonal boron nitride in graphene integrated on silicon photonics.

作者: Rafael Salas-Montiel , Jinbong Seok , Heejun Yang , Binbin Wang , Sera Kim

DOI: 10.1088/1361-6528/ABFB31

关键词:

摘要: Hexagonal boron nitride (hBN) is one of the most suitable 2D materials for supporting graphene in electronic devices, and it plays a fundamental role screening out effect charge impurities contrast to inhomogeneous supports such as silicon dioxide (SiO2). Although many interesting surface science techniques scanning tunneling microscopy (STM) revealed dielectric by hBN emergent physical phenomena were observed, STM only appropriate electronics. In this paper, we demonstrate integrated on photonic waveguide from perspective near-field optical (NSOM) Raman spectroscopy. We found shifts spectra about three times lower slope decrease measured electric amplitude relative that SiO2. Based finite-difference time-domain simulations, confirm field scattering rate hBN, which implies screening, agreement with NSOM signal. Graphene photonics can pave way high-performance hybrid photonics.

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