Nonlinear optical characteristics of monolayer MoSe2
作者： Chinh Tam Le , Daniel J. Clark , Farman Ullah , Velusamy Senthilkumar , Joon I. Jang
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摘要: In this study, we utilized picosecond pulses from an Nd:YAG laser to investigate the nonlinear optical characteristics of monolayer MoSe2. Two-step growth involving selenization pulsed-laser-deposited MoO3 film was employed yield MoSe2 on a SiO2/Si substrate. Raman scattering, photoluminescence (PL) spectroscopy, and atomic force microscopy verified high quality monolayer. The second-order susceptibility χ(2) calculated be ∼50 pm V−1 at second harmonic wavelength ∼810 nm, which is near gap Interestingly, our wavelength-dependent scan can identify bound excitonic states including negatively charged excitons much more efficiently, compared with PL method room temperature. Additionally, exhibits strong laser-induced damage threshold ∼16 GW cm−2 under picosecond-pulse excitation. Our findings suggest that considered as promising candidate for high-power, thin-film-based devices applications.
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