Electrical properties of chemical solution deposited (Bi0.9RE0.1)(Fe0.975Cu0.025)O3−δ (RE=Ho and Tb) thin films
作者： Jin Won Kim , Chinanmbedu Murugesan Raghavan , Youn-Jang Kim , Jeong-Jung Oak , Hae Jin Kim
DOI: 10.1016/J.CERAMINT.2012.10.060
关键词:
摘要: Abstract Pure BiFeO 3 (BFO) and (Bi 0.9 RE 0.1 )(Fe 0.975 Cu 0.025 )O 3− δ ( =Ho Tb, denoted by BHFCu BTFCu) thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates using a chemical solution deposition method. The BTFCu showed improved electrical ferroelectric properties compared to pure BFO film. Among them, the film exhibited large remnant polarization (2 P r ), low coercive field E c ) reduced leakage current density, which are 89.15 C/cm 345 kV/cm at 1000 kV/cm 5.38×10 −5 A/cm 100 kV/cm, respectively.
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