Two-photon absorption induced nanowelding for assembling ZnO nanowires with enhanced photoelectrical properties

摘要: The joining of semiconductor nanowires (NWs) is fundamental for the construction and assembly high performance nanoelectronic devices, but development reliable methods nanojoining nanowelding these components has been elusive to date. In this work, we report a methodology laser welding wide bandgap NWs based on two-photon absorption. Two photon excitation during femtosecond irradiation leads generation excitons forming an electron-hole plasma. As application technique, show that effective in two ZnO NWs. A nanoweld, resulting formation interconnected structure, occurs when energy solid state plasma deposited contact area between During with ultrashort pulses, rapid melting solidification result freezing out oxygen vacancies irradiated region near components. This enhances exciton trapping deposition at contact, facilitating bond It also found absorption visible light significantly increased NW structures assembled via processing. addition, junction created way exhibits photoresponse not present prior nanojoining. These results indicate promising technique selective thermal absence plasmonic interactions.