Method of selective epitaxial growth for compound semiconductors
作者： Hidenori Shimawaki
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摘要: A method of selective epitaxial growth for compound semiconductor includes the steps forming a layer group IV element semiconductor, such as Ge, with predetermined pattern on substrate and selectively by alternately supplying gas containing III or II element, trimethylgallium, triethylgallium triisobutylaluminum, V VI AsH 3 , onto both surface substrate. Another may be formed organometallic vapor phase epitaxy MBE.
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