作者: B.J. Kim , H. Jung , J. Shin , M.A. Mastro , C.R. Eddy
DOI: 10.1016/J.TSF.2008.11.067
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摘要: Abstract Here we introduce a simple and robust method to improve the light extraction efficiency of ultraviolet emitting diodes (UV LEDs). Although many previous efforts have focused on etching GaN surfaces, employed solution process texture surface. Arrays SiO2 nanosphere monolayers were spun cast onto polymer layer, consisting benzocyclobutene (BCB) resins; subsequently, bottom half nanospheres sunk into BCB layer. The resulting array formed in hexagonal-like pattern ‘nano-lenses’ photoluminescence measurement exhibited that these patterns enhanced extracting UV LEDs by 23%.