The OFF to ON switching time and ON state consolidation in write-once-read-many-times memory devices based on doped and undoped carbon-sphere/polymer composites
作者： Wagner S Machado , Messai A Mamo , Neil J Coville , Ivo A Hümmelgen , None
DOI: 10.1016/J.TSF.2012.02.075
关键词:
摘要: Abstract We investigate the write operation in memory devices prepared using thin films of carbon spheres and cross-linked poly(4-vinylphenol) composites. Three types carbon-spheres (N-doped, B-modified undoped spheres) are used their influence on characteristics is discussed. These show write-once-read-many-times (WORM) with an OFF to ON (high resistance low resistance) transition at voltages, ca. 2 V. ON-current, OFF-current current ratio composites three spheres. The results presented for different sphere concentration, each type. occurs less than 1 μs ON-state best case consolidated 10 μs, a write-operation voltage 5 V.
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