作者: Francesca Cavallo , Richard Rojas Delgado , Michelle M. Kelly , José R. Sánchez Pérez , Daniel P. Schroeder
DOI: 10.1021/NN503381M
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摘要: The excellent charge transport properties of graphene suggest a wide range application in analog electronics. While most practical devices will require that be bonded to substrate, such bonding generally degrades these properties. In contrast, when is transferred Ge(001) its conductivity extremely high and the carrier mobility derived from relevant measurements is, under some circumstances, higher than freestanding, edge-supported graphene. We measure ∼5 × 105 cm2 V–1 s–1 at 20 K, ∼103 300 K. These values are close theoretical limit for doped Carrier densities as 1014 cm–2