Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons

摘要: Although silicon and similar bulk materials are widely used in today's integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) silicene (SiNRs) seems inescapable due increment of inelastic scattering related performance degrading effects circuit components. In this context, GNRs SiNRs provide advantages low area consumption adjustment their electronic behaviours by edge states widths. On other hand, rectifiers together with static dynamic constitute basics electronics technology. paper, rectifier characteristics bare-dihydrogenated junctions GNR SiNR investigated compared utilizing first-principles approach. Density functional theory combination non-equilibrium Green's function formalism obtain current---voltage characteristics, transmission eigenstates electron densities considered then these quantities processed dynamical resistance, junction capacitance time constants structures, which is essential for based design. The paper concluded discussion large-signal small-signal performances commercial applications.