Hybrid dual gate ferroelectric memory for multilevel information storage
作者： M.A. Khan , J.A. Caraveo-Frescas , H.N. Alshareef
DOI: 10.1016/J.ORGEL.2014.10.034
关键词:
摘要: Abstract Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and P(VDF-TrFE) polymer. The dual gate devices include a top field-effect transistor (FeFET) bottom thin-film (TFT). are all fabricated at low temperatures (∼200 °C), demonstrate excellent performance high hole mobility of 2.7 cm2 V−1 s−1, large window ∼18 V, sub-threshold swing ∼−4 V dec−1. channel conductance the bottom-TFT top-FeFET can be controlled independently by gates, respectively. results nonvolatile good retention characteristics.
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