InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy
作者： M Murtagh , J.T Beechinor , N Cordero , P.V Kelly , G.M Crean
DOI: 10.1016/S0921-5107(99)00088-4
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摘要: In this work we have characterised InGaP/GaAs based heterojunction bipolar transistor (HBT) structures, fabricated by metalorganic chemical vapour phase epitaxy (MOVPE), using non-contact electro-optic spectroscopic techniques, photoreflectance (PR), photoluminescence (PL) and ellipsometry. PR analysis details both band structure interfacial electric field data for the GaAs collector InGaP emitter regions. Including sub-lattice ordering alloy, also indicates presence of an or intermixing layer between base as a result non-optimal MOVPE growth. The results are compared with room temperature PL spectra, demonstrating in particular modification to lineshape arising from conditions. experimental supported finite-element device simulation, showing effect mixing layers on potentials. To interpret HBT ellipsometric response it was found necessary include within optical model, consistent previous data. implications these performance discussed.
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