Ion-induced tracks in Bi4Ge3O12 and Bi12GeO20 crystals
作者： G. Szenes , D. Fink , S. Klaumünzer , F. Pászti , Á. Péter
DOI: 10.1016/J.NIMB.2005.11.140
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摘要: Abstract Single crystalline Bi 4 Ge 3 O 12 and GeO 20 samples were irradiated at room temperature with various fluences of O, Ne, Ar, Kr, Xe Pb ions. The ion energies 0.35, 1.0 1.7 MeV/u. investigated by Rutherford backscattering in channeling geometry. track radii derived from the data depend on electronic stopping power velocity. average threshold values for formation are (3.3 ± 0.5) (2.6 ± 0.3) keV/nm , respectively. results good agreement an analytical thermal spike model previously developed.
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