Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions

摘要: Using the results of technological experiments based on a two-component kinetic model (SiH4 → SiH3 + SiH), range characteristic decomposition frequencies silicon-hydride molecule radicals adsorbed by layer growth surface in temperature 450–700°C is determined; degree silicon coverage SiH under epitaxial-growth conditions estimated. The behavior dependences factor filling individual fragments and rate their are determined various corresponding to constant concentration ratio monosilane (SiH = gSiH3) or rates \(\left( {v_{SiH_3 } \xi v_{SiH} \right)\) entire range. It shown that observed shape dependence not described simple activation-type curves, which associated with features interaction molecular hydride beam Si low high levels surface-bond saturation hydrogen. effect mechanism adsorption hydrogen atoms transfer from considered.