In situ manipulation and switching of dislocations in bilayer graphene.

摘要: Topological defects in crystalline solids are of fundamental interest physics and materials science because they can radically alter the properties virtually any material. Of particular importance line defects, known as dislocations, which main carriers plasticity have a tremendous effect on electronic optical properties. Understanding controlling occurrence behavior those been major ongoing since their discovery 1930s. This was renewed with advent two-dimensional single topological defect functionality whole system even create new physical phenomena. We present an experimental approach to directly manipulate dislocations situ nanometer scale by using dedicated scanning electron microscope setup. With this approach, key characteristics such tension, interaction, node formation studied. A novel switching reaction, based recombination dislocation lines, found, paves way for concept switches made bimodal configuration.