High Power Broadband Amplifiers for 1-18 GHz Naval Radar

摘要: Abstract : Three generations of dual-gate AlGaN/GaN HEMTs on sapphire were fabricated and characterized. First generation HEMT had equal gate lengths 650 nm produced through stepper lithography. Current gain cut-off frequency (f sub tau)) 20 GHz, 60 V breakdown, 11 dB small-signal gain, 2.5 W/mm saturated output power, 35% power added efficiency (PAE) at 4 GHz achieved. Second third unequal to simultaneously achieve both large f(sub tau) breakdown voltage. Gate one located closest the source a length 150 two 300 nm. Both gates 'Upsilon' shaped cross-sections reduce resistance defined by e-beam An 52 voltage greater than 100 was achieved for second devices. Single devices with same sample showed 40 V. With an improvement in lithography material, 65 70 V, 12 3.5 45% PAE 8.2 GHz.