Fabrication of Highly Selective Tungsten Oxide Ammonia Sensors

作者: E. Llobet , G. Molas , P. Molinàs , J. Calderer , X. Vilanova

DOI: 10.1149/1.1393270

关键词:

摘要: Most of the chemical sensors described in literature are based on inorganic semiconducting oxides. In some cases, main oxide is modified by doping with small amounts additives such as other oxides and/or metals. The sensing principle change conductance undergone film when gases adsorbed and react its surface. A survey typical sensor materials for detecting different characteristic temperature ranges can be found elsewhere. 1,2 recent years, gas-sensitivity studies tungsten trioxide (WO 3 ) semiconductors have been reported. Pure or doped a promising material detection nitrogen (NO NO 2 3-6 sulfur dioxide, 7 two substances which considered to responsible ambient degradation together carbon hydrocarbons. gas-sensing properties WO highly dependent deposition method. Tungsten generally deposited reactive rf sputtering. 8-10 However, techniques thermal evaporation, 11,12 sol-gel methods, 13 screen printing, 14 photochemical production 6 reported grow thin thick active

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