作者: Mamatha D. Daivajna , Ashok Rao , G.S. Okram
DOI: 10.1016/J.JMMM.2015.04.025
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摘要: Abstract In the present investigation detailed electrical, magnetic and thermoelectric measurements on Bi-doped L0.6−xBixSr0.4MnO3 (0≤x≤0.3) manganites have been done. All samples are single phased. The metal-insulator transition temperatures (TMI) as well Curie temperature (TC) both found to decrease with Bi-content. Magneto-resistance (MR) data shows that MR (%) increases Bi-content thereby showing it can be used in memory based devices. Resistivity small polaron hopping (SPH) model is valid high regime. Low resistivity depicts electron–electron scattering mainly responsible for conduction mechanism. High power (TEP) reaffirms validity of SPH model.