Sol-gel synthesis of PZT thin films

摘要: Summary form only given. Information is presented on a diol based sol-gel route for the fabrication of PZT thin films in thickness range 0.5-10 microns. Crystallisation and ferroelectric properties have been measured as function film firing temperatures (53/47) deposited 111-Pt/Ti/SiO2/Si substrates. The results highlight complex interrelationships between thermal history film/electrode/substrate stack. generally exhibit 111 preferred orientation due to heterogeneous nucleation growth from electrode-film interface. However type extent may be influenced by reactions occurring at low platinum electrode underlying Ti adhesion layer, because layer. Results 53/47 illustrate, expected, an overall decrease with increasing thickness. increase remanent polarisation coercive field are considered combination changes stress levels, together proportionately reduced effect permittivity interfacial phases. Further information interrelationship crystallite parameters has obtained investigating compositions away morphotropic phase boundary order eliminate possibility di-phasic structures that complicate data analysis. Finally, preliminary new system commented upon. (1 page)