High-voltage TFT fabricated in recrystallized polycrystalline silicon
作者： T. Unagami , O. Kogure
DOI: 10.1109/16.2457
关键词:
摘要: High-voltage thin-film transistors (TFTs) fabricated using CW-Ar laser annealed polycrystalline silicon have an offset gate structure between the source and drain. The breakdown voltage, transconductance, leakage current in various size TFTs are described. These exhibited n-channel enhancement characteristics with a low-threshold voltage above 100 V could be obtained at length of 20 mu m. Active TFT circuits were these high-voltage Si TFTs. can drive EL (electroluminescent display) low signal voltage. >
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