Medium range order engineering in amorphous silicon thin films for solid phase crystallization
作者： Felix Law , Per I. Widenborg , Joachim Luther , Bram Hoex
DOI: 10.1063/1.4807166
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摘要: In recent years, it has been recognized that medium range ordering (MRO) in amorphous silicon (a-Si:H) plays a role controlling its solid phase crystallization (SPC) behavior. Information on the MRO can be obtained from width of first X-ray diffraction (XRD) peak a-Si:H centered around 2θ = 27.5°. The broader full half maximum (FWHM) XRD peak, less ordered material length scale (up to 5 nm). this work, was found FWHM changes with pressure used during deposition a-Si:H. A threshold SPC behavior observed as function and good correlation between found. Results study indicate higher led faster rates smaller grain sizes, suggesting presence relatively active high density nucleation sites. High angle annular dark field scanning transmission electron m...
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