作者: Liangzhi Kou , Chun Li , Zhuhua Zhang , Wanlin Guo
DOI: 10.1021/JP909584J
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摘要: We report on the electric-field- and H chemical-absorption-induced band manipulations of armchair ZnO nanoribbons using first-principles calculations. It is shown that gap a semiconducting nanoribbon can be reduced monotonically with increasing transverse field strength, demonstrating giant Stark effect. The critical strength to completely close decreases ribbon width, while it almost independent stacking thickness. On other hand, edges fully passivated shows an enhanced but slightly weaker also observe hydrogen-termination-induced metallization ribbons when only edge O atoms are passivated, which results from n-type doping These findings suggest potential ways engineering in nanoribbons.