Controllable boron doping of carbon nanotubes with tunable dopant functionalities: an effective strategy toward carbon materials with enhanced electrical properties

摘要: We present a two-step postgrowth substitution reaction route to produce boron-doped carbon nanotubes (BCNTs) with controllable B dopant concentration and uniform atom distribution under atmospheric pressure. The unique comprised simple wet-chemistry-assisted pretreatment an atmospheric-pressure carbothermic reaction. Extensive materials characterizations confirmed that BCNTs atomic from 0.40 3.92 percent (atom%) can be produced by controlling the time temperature pressure in developed method. film-based electrical sheet resistance measurement indicates averaged resistances of as-fabricated CNT-based films improved 1520 ± 197.56 43.67 12.63 Ω per square 2.09 atom% doped CNTs. High-resolution X-ray photoelectron spectroscopy (HRXPS) characterization suggests B–C–O bonding types concentrations as-produced may play important role nanotube properties. Our study provides methodology tailor material properties carbon-based materials.