THERMOELECTRIC DEVICE AND MANUFACTURE OF THERMOELECTRIC DEVICE

摘要: PURPOSE:To provide an ultra thin and light thermoelectric device which realizes high efficiency of conversion a method for mass production the with yield at low cost by forming vacuum heat generation part between temperature edge face excepting semiconductor film part. CONSTITUTION:A patterned electrode 10 is provided to upper side substrate 8, pair P-type N-type parts 11, 12 are surface polycrystalline silicon on wherein not formed. An 13 further in contact arrange 11 alternately electrically series thermally parallel. Thereafter, etched form cavity, etching hole sealed insulation 14