Electrical properties of ( p)Te‐( p)Si isotype heterojunction
作者： A. Mansingh , A. K. Garg
DOI: 10.1063/1.334266
关键词:
摘要: The ( p) tellurium‐( p) silicon heterojunction has been prepared by vacuum evaporation of tellurium (Te) films on (Si) substrates. influence the thickness (1000–13000 A) and annealing electrical properties have investigated. heated substrates (∼425 K) show annealed good adherance Si current‐voltage (I‐V) characteristics ( p)Te‐( p)Si studied in temperature range 77 to about 360 K. I‐V a double saturation indicating applicability Schottky diode model for isotype heterojunctions when large density interface states (∼1014) are present. film resistivity (0.4–11 Ω cm) little or builtin potential estimated from dependence characteristics. In spite difference band gap Te estimat...
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