The influence of Al doping on optical, electrical and structural properties of transparent and conducting SnO 2 : Al thin films prepared by spray pyrolysis technique

作者: M. Mwamburi , Maxwell Mageto

DOI:

关键词:

摘要: A B ST R C T The influence of increasing Al concentration on the electrical, optical and structural properties transparent conducting 2 SnO : films has been investigated. were deposited glass substrates at a temperature 480°C using hydro-alcoholic solution consisting 4 SnCl .5H O 3 AlCl .6H with various Al-doping levels from 0 to 0.53 being spray ratios in solution. effect changing aluminum-to-tin ratio, [ ]/[ Sn ], was studied UV/VIS/NIR region. band gap for undoped lay 3.9 eV, whereas high -doped it shifts towards lower energies range – 3.61 eV. results x-ray diffraction have shown that are polycrystalline without any second phases preferential orientations along (110), (101), (200) (211) planes an average grain size 25.7 nm. It doping lowers both electrical conductivity tin oxide significantly.

参考文章(1)
Robert F. Pierret, Semiconductor device fundamentals Addison-Wesley. ,(1996)