Embedded non-volatile memory with single polysilicon layer memory cells erasable through band to band tunneling induced hot electron and programmable through fowler-nordheim tunneling
作者： Anna Richelli , Fabrizio Torricelli , Luca Milani , Zsolt Miklos Kovàcs-Vajna , Luigi Colalongo
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摘要: A non-volatile memory includes cells arranged in rows and columns. Each cell an access portion a control portion. The portions share electrically floating layer of conductive material defining first capacitive coupling with the second defines capacity lower than defined by coupling. is configured so that electric current extracts charge carriers from through Fowler-Nordheim tunneling to store logic value cell. injects injection band-to-band tunneling-induced hot electrons value, respectively,
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