Magneto-resistance effect element including diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory
作者： Hitoshi Iwasaki , Masahiro Takashita , Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji
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摘要: An example magneto-resistance effect element includes a magnetization layer and free of which direction changes depending on an external magnetic field. A spacer is located between the layer, has insulating electric conductor passing current therethrough in layer. diffusive electron scattering disposed said for electrons. The first nonmagnetic second containing element, respectively, mixing at boundary layers elements. thickness 0.5 nm or more 1.5 less.
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