Silicon Texturing Under Negative Potential Dissolution (NPD) Conditions

作者: Y. Ein-Eli , N. Gordon , D. Starosvetsky

DOI: 10.1016/B978-044452224-5/50041-X

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摘要: Abstract “As – cut” (111) oriented p-type silicon can be textured via NPD process at potentials below -10 V in KOH concentrations between 16 and 32% wt. The surface of is characterized with morphology arrayed pits the shape flat bottomed triangles. It was established that surface, as well a current-time profile recorded during texturing are strongly dependent on applied potential. Increase concentration negative shift potential significantly reduce time.

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