作者: Manoj Narayanan , Beihai Ma , U. (Balu) Balachandran , Wei Li
DOI: 10.1063/1.3291127
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摘要: Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films were deposited by sol-gel synthesis on Hastelloy substrates with and without a LaNiO3 buffer. The dielectric properties measured as function of temperature frequency to study the cause degradation in PLZT directly hastelloy substrates. These measurements indicated an increased charge carrier activity buffer layer. We propose that region film closer substrate surface is more oxygen deficient than bulk responsible for rather presence low parasitic secondary-phase interfacial layer such NiOx.