作者: David E. Dyshel'
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摘要: Scanning electron microscopy is used to examine the structure (of thin- and thick-film gas sensors based on Sn1‐xSbxO2 solid solutions. The solid-solution particles are found not sinter. temperature dependences of resistance volt-ampere characteristics films studied. A mechanism for sensitivity suggested. In model presented electrons transported across grain-boundary Schottky barriers by thermoelectron emission tunneling.