Materials Science Communication The alloying effect on positron states in Si1xGex
作者： N. Bouarissa , Z. Charifi
DOI: 10.1016/S0254-0584(97)02060-9
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摘要: Abstract The effect of alloying on positrons in Si1 −xGex is reported. Our computations are based the independent particle model combined with empirical pseudopotential method. To make an allowance for chemical disorder, virtual crystal approximation used, including a correction to alloy potential. evolution positron thermalization energy versus mole fraction shows that diffuse better over range 0.15 x .0. calculated effective band masses Si and Ge good agreement available experimental theoretical ones, vary non-linearly from Ge. distribution difference between different compositions indicates has affinity one sort atom xGex. It was noted not sensitive disorder effect. Based these results, this study could stimulate further work annihilation semiconductor alloys.
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