Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsenic

摘要: Due to the extreme toxicity of AsH3, safer alternatives for III–V epitaxy are highly desirable. In addition, AsH3 molecule is too stable decompose on wafer surface at temperature and pressure conditions normally used during growth by metalorganic molecular beam (MOMBE). This requires use high‐temperature cracker cells elemental As prior entry chamber as a result leads significant buildup within chamber. this letter we report first time MOMBE low temperatures (≤525 °C) using novel precursor, tris‐dimethylaminoarsenic (DMAAs) without precracking. Specular morphologies were obtained over wide range temperatures, 375–525 °C, both GaAs AlGaAs. Carbon concentrations measured SIMS analysis in layers deposited from triethylgallium lower than those similar flux while carbon was reduced more two orders magnitude films grown with...